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MH32S72VJA-6 Datasheet(PDF) 14 Page - Mitsubishi Electric Semiconductor

Part # MH32S72VJA-6
Description  2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

MH32S72VJA-6 Datasheet(HTML) 14 Page - Mitsubishi Electric Semiconductor

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MITSUBISHI
ELECTRIC
2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
MH32S72VJA-6
MITSUBISHI LSIs
8/May. /1999
MIT-DS-0311-0.0
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Condition
Ratings
Unit
Vdd
VI
VO
IO
Pd
Topr
Tstg
Supply Voltage
Input Voltage
Output Voltage
Output Current
Power Dissipation
Operating Temperature
Storage Temperature
with respect to Vss
with respect to Vss
with respect to Vss
Ta=25C
-0.5 ~ 4.6
-0.5 ~ 4.6
-0.5 ~ 4.6
50
22
0 ~ 70
-45 ~ 100
V
V
V
mA
W
C
C
RECOMMENDED OPERATING CONDITION
(Ta=0 ~ 70C, unless otherwise noted)
Symbol
Vdd
Vss
VIH*1
VIL*2
Parameter
Supply Voltage
High-Level Input Voltage all inputs
Supply Voltage
Low-Level Input Voltage all inputs
Limits
Unit
Min.
Typ.
Max.
3.0
0
2.0
-0.3
3.3
0
3.6
0
Vdd+0.3
0.8
V
V
V
V
CAPACITANCE
(Ta=0 ~ 70C, Vdd = 3.3 +/- 0.3V, Vss = 0V, unless otherwise noted)
Symbol
CI(A)
CI(C)
CI(K)
CI/O
Parameter
Input Capacitance, address pin
Input Capacitance, control pin
Input Capacitance, CK0 pin
Input Capacitance, I/O pin
Test Condition
Limits(max.)
Unit
1MHz,
1.4V bias
200mV swing
20
20
20
16.5
pF
pF
pF
pF
14
NOTES)
1. VIH(max)= 5.5V for pulse width less than 10ns.
2. VIL('min)= -1.0V for pulse width less than 10ns.


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