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SA602A Datasheet(PDF) 4 Page - NXP Semiconductors |
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SA602A Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 11 page Philips Semiconductors Product specification SA602A Double-balanced mixer and oscillator 1997 Nov 07 4 The oscillator is capable of sustaining oscillation beyond 200MHz in crystal or tuned tank configurations. The upper limit of operation is determined by tank “Q” and required drive levels. The higher the “Q” of the tank or the smaller the required drive, the higher the permissible oscillation frequency. If the required LO is beyond oscillation limits, or the system calls for an external LO, the external signal can be injected at Pin 6 through a DC blocking capacitor. External LO should be at least 200mVP-P. Figure 7 shows several proven oscillator circuits. Figure 7a is appropriate for cellular radio. As shown, an overtone mode of operation is utilized. Capacitor C3 and inductor L1 suppress oscillation at the crystal fundamental frequency. In the fundamental mode, the suppression network is omitted. Figure 8 shows a Colpitts varactor tuned tank oscillator suitable for synthesizer-controlled applications. It is important to buffer the output of this circuit to assure that switching spikes from the first counter or prescaler do not end up in the oscillator spectrum. The dual-gate MOSFET provides optimum isolation with low current. The FET offers good isolation, simplicity, and low current, while the bipolar transistors provide the simple solution for non-critical applications. The resistive divider in the emitter-follower circuit should be chosen to provide the minimum input signal which will assure correct system operation. When operated above 100MHz, the oscillator may not start if the Q of the tank is too low. A 22k Ω resistor from Pin 7 to ground will increase the DC bias current of the oscillator transistor. This improves the AC operating characteristic of the transistor and should help the oscillator to start. A 22k Ω resistor will not upset the other DC biasing internal to the device, but smaller resistance values should be avoided. 87 65 4 3 2 1 OUTPUT 150pF 330pF 120pF 1.5 to 100nF 220pF INPUT 47pF 22pF 1nF 100nF 10nF VCC 6.8 µF 5.5 µH 0.209 to 0.283 µH 44.2 µH 10pF 34.545MHz THIRD OVERTONE CRYSTAL 602A 0.5 to 1.3 µH SR00070 Figure 3. Test Configuration |
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