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SFF40N30M Datasheet(PDF) 2 Page - Solid States Devices, Inc |
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SFF40N30M Datasheet(HTML) 2 Page - Solid States Devices, Inc |
2 / 3 page Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF40N30M SFF40N30Z Electrical Characteristics @ TJ = 25ºC (Unless Otherwise Specified) Symbol Min Typ Max Units Drain to Source Breakdown Voltage (VGS=0 V, ID=250 µA) BVDSS 300 –– –– Volts Drain to Source On State Resistance (VGS=10 V, ID=50% Rated ID ) RDS(on) –– –– 0.10 Ω On State Drain Current (VDS>ID(on) X RDS(on) Max, VGS=10V) ID(on) 40 –– –– A Gate Threshold Voltage (VDS=VGS, ID= 4mA ) VGS(th) 2.0 –– 4.0 V Forward Transconductance (VDS>ID(on) X RDS(on) Max, IDS= 50% Rated ID ) gfs 15 25 –– mho Zero Gate Voltage Drain Current (VDS=max rated voltage, VGS=0 V) (VDS=80% rated VDS, VGS=0 V, TA=125ºC) IDSS –– –– –– –– 250 1000 µA Gate to Source Leakage Forward Gate to Source Leakage Reverse At rated VGS IGSS –– –– –– –– +100 -100 nA Total Gate Charge Gate to Source Charge Gate to Drain Charge VGS=10 Volts 50% rated VDS 50% Rated ID Qg Qgs Qgd –– –– –– 177 28 78 200 50 105 nC Turn on Delay Time Rise Time Turn on Delay Time Fall Time VDD=50% Rated VDS 50% Rated ID RG= 2.0 Ω VGS=10 Volts td(on) tr td(off) tf –– –– –– –– 30 60 175 45 50 90 250 90 nsec Diode Forward Voltage (IS= Rated ID, VGS=0 V, TJ=25ºC) VSD –– –– 1.5 V Diode Reverse Recovery Time Reverse Recovery Charge TJ=25ºC IF=10A Di/dt=100A/ µsec trr QRR –– –– –– –– 325 –– nsec nC Input Capacitance Input Capacitance Reverse Transfer Capacitance VGS=0 Volts VDS=25 Volts f=1 MHz Ciss Coss Crss –– –– –– 4800 745 283 –– –– –– pF For thermal derating curves and other characteristics please contact SSDI Marketing Department. Available Part Numbers: SFF40N30M; SFF40N30MDB; SFF40N30MUB; SFF40N30Z; SFF40N30ZDB; SFF40N0ZUB; PIN ASSIGNMENT (Standard) Package Drain Source Gate TO-254 (M) Pin 1 Pin 2 Pin 3 TO-254Z (Z) Pin 1 Pin 2 Pin 3 |
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