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MH32S72BBFA-6 Datasheet(PDF) 15 Page - Mitsubishi Electric Semiconductor |
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MH32S72BBFA-6 Datasheet(HTML) 15 Page - Mitsubishi Electric Semiconductor |
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15 / 56 page  MITSUBISHI ELECTRIC 2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM MH32S72BBFA -6 MITSUBISHI LSIs 16/Jun. /1999 MIT-DS-333-0.1 15 AVERAGE SUPPLY CURRENT from Vdd (Ta=0 ~70°C, Vdd = 3.3 ± 0.3V, Vss = 0V, unless otherwise noted) AC OPERATING CONDITIONS AND CHARACTERISTICS (Ta=0 ~ 70°C, Vdd = 3.3 ± 0.3V, Vss = 0V, unless otherwise noted) Symbol Parameter Test Condition Limits Unit Min. Max. VOH(DC) High-Level Output Voltage(DC) IOH=-2mA 2.4 V VOL(DC) Low-Level Output Voltage(DC) IOL=2mA 0.4 V IOZ Off-stare Output Current Q floating VO=0 ~ Vdd -10 10 uA Ii Input Current VIH=0 ~ Vdd+0.3V -10 10 uA Test Condition Limits (max) Unit tRC=min.tCLK=min, BL=1, IOL=min 2645 mA CKE=VILmax,tCLK=15ns 107 mA CKE=CLK=VILmax(fixed) 71 mA 935 mA tCLK=min, BL=4, CL=3,IOL=0mAall banks active(discerte) 3095 mA tRC=min, tCLK=min 5435 mA CKE <0.2V 71 mA CKE=/CS=VIHmin,tCLK=15ns(Note) Note:Input signals are changed one time during 30ns. Symbol Icc1 Icc2P Icc2PS Icc2NS Icc4 Icc5 Icc6 Icc2N Parameter operating current one bank activ e (discrete) precharge stanby current in power-down mode burst current auto-refresh current self-refresh current CKE=VIHmin,CLK=VILmax(f ixed) 755 mA precharge stanby current in non power-down mode 107 mA Icc3PS Icc3P 71 mA active stanby current in power-down mode 2015 mA CKE=/CS=VIHmin,tCLK=15ns Icc3NS Icc3N CKE=VIHmin,CLK=VILmax(f ixed) 1475 mA active stanby current in non power-down mode one bank activ e (discrete) CKE=VILmax,tCLK=15ns CKE=CLK=VILmax(fixed) -6 |
Similar Part No. - MH32S72BBFA-6 |
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Similar Description - MH32S72BBFA-6 |
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