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MH32S72BBFA-6 Datasheet(PDF) 6 Page - Mitsubishi Electric Semiconductor |
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MH32S72BBFA-6 Datasheet(HTML) 6 Page - Mitsubishi Electric Semiconductor |
6 / 56 page ![]() MITSUBISHI ELECTRIC 2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM MH32S72BBFA -6 MITSUBISHI LSIs 16/Jun. /1999 MIT-DS-333-0.1 COMMAND TRUTH TABLE 6 H=High Level, L=Low Level, V=Valid, X=Don't Care, n=CLK cycle number NOTE: 1. A7-A9 =0, A0-A6 =Mode Address COMMAND MNEMONIC CKE n-1 CKE n /CS /RAS /CAS /WE BA0,1 A11 A10 A0-9 Deselect DESEL H X H X X X X X X X No Operation NOP H X L H H H X X X X Row Address Entry & Bank Activate ACT H X L L H H V V V V Single Bank Precharge PRE H X L L H L V X L X Precharge All Banks PREA H X L L H L X H X Column Address Entry & Write WRITE H X L H L L V X L V Column Address Entry & Write with Auto- Precharge WRITEA H X L H L L V X H V Column Address Entry & Read READ H X L H L H V X L V Column Address Entry & Read with Auto- Precharge READA H X L H L H V X H V Auto-Refresh REFA H H L L L H X X X X Self-Refresh Entry REFS H L L L L H X X X X Self-Refresh Exit REFSX L H H X X X X X X X L H L H H H X X X X Burst Terminate TBST H X L H H L X Mode Register Set MRS H X L L L L L L L V*1 X X X X |
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