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MH32S72BBFA-6 Datasheet(PDF) 5 Page - Mitsubishi Electric Semiconductor |
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MH32S72BBFA-6 Datasheet(HTML) 5 Page - Mitsubishi Electric Semiconductor |
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5 / 56 page  MITSUBISHI ELECTRIC 2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM MH32S72BBFA -6 MITSUBISHI LSIs 16/Jun. /1999 MIT-DS-333-0.1 BASIC FUNCTIONS /S Chip Select : L=select, H=deselect /RAS Command /CAS Command /WE Command CKE Ref resh Option @ref resh command A10 Precharge Option @precharge or read/write command CK def ine basic commands The MH32S72BBFA provides basic functions,bank(row)activate,burst read / write, bank(row)precharge,and auto / self refresh. Each command is defined by control signals of /RAS,/CAS and /WE at CK rising edge. In addition to 3 signals,/S,CKE and A10 are used as chip select,refresh option,and precharge option,respectively. To know the detailed definition of commands please see the command truth table. Activate(ACT) [/RAS =L, /CAS = /WE =H] Read(READ) [/RAS =H,/CAS =L, /WE =H] Write(WRITE) [/RAS =H, /CAS = /WE =L] Precharge(PRE) [/RAS =L, /CAS =H,/WE =L] Auto-Refresh(REFA) [/RAS =/CAS =L, /WE =CKE =H] ACT command activates a row in an idle bank indicated by BA. READ command starts burst read from the active bank indicated by BA.First output data appears after /CAS latency. When A10 =H at this command,the bank is deactivated after the burs t read(auto-precharge,READA). WRITE command starts burst write to the active bank indicated by BA. Total data length to be written is set by burst length. When A10 =H at this command, the bank is deactivated after the burst write(auto-precharge,WRITEA). PRE command deactivates the active bank indicated by BA. This command also term inates burs t read / write operation. When A10 =H at this command, both banks are deactivated(precharge all, PREA). PEFA command starts auto-refresh cycle. Refresh address including bank address are generated internally. After this command, the banks are precharged automatically. 5 |
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