Si8440/41/42/45

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Table 8. IEC 60664-1 (VDE 0844 Part 2) Ratings

Parameter

Test Condition

Specification

Basic Isolation Group

Material Group

I

Installation Classification

Rated Mains Voltages < 150 VRMS

I-IV

Rated Mains Voltages < 300 VRMS

I-III

Rated Mains Voltages < 400 VRMS

I-II

Rated Mains Voltages < 600 VRMS

I-II

Table 9. IEC 60747-5-2 Insulation Characteristics for Si84xxxB*

Parameter

Symbol

Test Condition

Characteristic

Unit

Maximum Working Insulation Voltage

VIORM

560

V peak

Input to Output Test Voltage

VPR

Method b1

(VIORM x 1.875 = VPR, 100%

Production Test, tm = 1 sec,

Partial Discharge < 5 pC)

1050

V peak

Transient Overvoltage

VIOTM

t = 60 sec

4000

V peak

Pollution Degree (DIN VDE 0110, Table 1)

2

Insulation Resistance at TS, VIO =500 V

RS

>109



*Note: Maintenance of the safety data is ensured by protective circuits. The Si84xx provides a climate classification of

40/125/21.

Table 10. IEC Safety Limiting Values1

Parameter

Symbol

Test Condition

Min Typ

Max

Unit

WB

SOIC-16

NB

SOIC-16

Case Temperature

TS

—

—

150

150

°C

Safety input, output, or

supply current

IS

JA = 100 °C/W (WB SOIC-16),

105 °C/W (NB SOIC-16),

VI =5.5 V, TJ =150 °C, TA =25°C

—

—

220

210

mA

Device Power Dissipa-

tion2

PD

—

—

275

275

mW

Notes:

1. Maximum value allowed in the event of a failure; also see the thermal derating curve in Figures 3 and 4.

2. The Si844x is tested with VDD1 = VDD2 = 5.5 V, TJ = 150 ºC, CL = 15 pF, input a 150 Mbps 50% duty cycle square

wave.