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MB84VD22184FM-70 Datasheet(PDF) 2 Page - SPANSION |
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MB84VD22184FM-70 Datasheet(HTML) 2 Page - SPANSION |
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2 / 46 page  MB84VD22184FM/VD22194FM-70 2 (Continued) — FLASH MEMORY • Simultaneous Read/Write Operations (Dual Bank) Bank 1 : 8 Mbit (8 KB × 8 and 64 KB × 15) Bank 2 : 24 Mbit (64 KB × 48) Host system can program or erase in one bank, and then read immediately and simultaneously from the other bank with zero latency between read and write operations. Read-while-erase Read-while-program • Minimum 100,000 Write/Erase Cycles • Sector Erase Architecture Eight 4K word and sixty-three 32K word sectors in word mode Any combination of sectors can be concurrently erased. Also supports full chip erase. • Boot Code Sector Architecture MB84VD22184: Top sector MB84VD22194: Bottom sector • Embedded EraseTM * Algorithms Automatically pre-programs and erases the chip or any sector • Embedded ProgramTM * Algorithms Automatically writes and verifies data at specified address •Data Polling and Toggle Bit Feature for Detection of Program or Erase Cycle Completion • Ready-Busy Output (RY/BY) Hardware method for detection of program or erase cycle completion • Automatic Sleep Mode When addresses remain stable, automatically switch themselves to low power mode. •Low VCCf Write Inhibit ≤ 2.5 V • HiddenROM Region 256 byte of HiddenROM, accessible through a new “HiddenROM Enable” command sequence Factory serialized and protected to provide a secure electronic serial number (ESN) •WP/ACC Input Pin At VIL, allows protection of “outermost” 2 × 8 bytes on boot sectors, regardless of sector protection/unprotection status. At VIH, allows removal of boot sector protection At VACC, increases program performance • Erase Suspend/Resume Suspends the erase operation to allow a read in another sector within the same device • Please refer to “MBM29DL34TF/BF” Datasheet in Detailed Function — SRAM • Power Dissipation Operating : 40 mA Max Standby : 10 µA Max • Power Down Features using CE1s and CE2s • Data Retention Supply Voltage: 1.5 V to 3.1 V •CE1s and CE2s Chip Select • Byte Data Control: LB (DQ7 to DQ0), UB (DQ15 to DQ8) *: Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc. |
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