MB84VD22184FM-70 datasheet(42/46 Pages) SPANSION

Part #	MB84VD22184FM-70

Description	32M (X16) FLASH MEMORY & 4M (X16) STATIC RAM

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MB84VD22184FM/VD22194FM-70

42

2.

Data Retention Characteristics (SRAM)

Note : tRC: Read cycle time

•CE1s Controlled Data Retention Mode *1

*1 : In CE1s controlled data retention mode, input level of CE2s should be fixed Vccs to Vccs–0.2 V or Vss

to 0.2 V during data retention mode. Other input and input/output pins can be used between –0.3 V to

Vccs+0.3 V.

*2 : When CE1s is operating at the VIH Min level, the standby current is given by ISB1s during the transition

of VCCs from VCCs Max to VIH Min level.

• CE2s Controlled Data Retention Mode *

* : In CE2s controlled data retention mode, input and input/output pins can be used between

–0.3 V to Vccs+0.3V.

Parameter

Symbol

Value

Unit

Min

Typ

Max

Data Retention Supply Voltage

VDH

1.5

—

3.1

V

Standby Current

VDH = 3.0 V

IDDS2

——

10

µA

Chip Deselect to Data Retention Mode Time

tCDR

0—

—

ns

Recovery Time

tR

tRC

——

ns

VCCs

2.7 V

VIH

GND

Data Retention Mode

*2

tCDR

CE1s

VCCs – 0.2 V

*2

tR

VDH

VCCs

2.7 V

GND

Data Retention Mode

VIH

VIL

CE2s

tCDR

tR

0.2 V

VDH

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MB84VD22184FM-70 Datasheet(PDF) 42 Page - SPANSION

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