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MB84VD22184FM-70 Datasheet(PDF) 35 Page - SPANSION |
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MB84VD22184FM-70 Datasheet(HTML) 35 Page - SPANSION |
35 / 46 page ![]() MB84VD22184FM/VD22194FM-70 35 s 4 M SRAM for MCP 1. AC Characteristics •Read Cycle (SRAM) Note: Test Conditions– Output Load:1 TTL gate and 30 pF Input rise and fall times: 5 ns Input pulse levels: 0.0 V to VCCs Timing measurement reference level Input: 0.5×VCCs Output: 0.5×VCCs Parameter Symbol Value Unit Min Max Read Cycle Time tRC 70 — ns Address Access Time tAA —70 ns Chip Enable (CE1s) Access Time tCO1 —70 ns Chip Enable (CE2s) Access Time tCO2 —70 ns Output Enable Access Time tOE —35 ns LB, UB to Output Valid tBA —70 ns Chip Enable (CE1s Low and CE2s High) to Output Active tCOE 5— ns Output Enable Low to Output Active tOEE 0— ns UB, LB Enable Low to Output Active tBE 0— ns Chip Enable (CE1s High or CE2s Low) to Output High-Z tOD —25 ns Output Enable High to Output High-Z tODO —25 ns UB, LB Output Enable to Output High-Z tBD —25 ns Output Data Hold Time tOH 10 — ns |
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