Features

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77 Ghz Frequency Response

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1.4 dB Insertion Loss

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24 dB Isolation

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2nS Switching Speed

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Silicon Nitride Passivation

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Polyimide Scratch Protection

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Designed for Automated Pick and Place Insertion

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Qualified for Automotive Environments

Description

The MA4CG6774 is a 77 GHz SP3T Switch made from

Gallium Arsenide PIN Diodes, and semi-insulating GaAs Substrate

designed for Automotive Applications. These diodes are fabricated

on OMCVD epitaxial wafers using a process designed for

repeatable electrical characteristics and extremely low parasitics.

These Diodes are fully passivated with Silicon Nitride and have an

additional layer of Polymide for scratch protection. This protective

coating prevents damage to the junction during automated or

manual handling. These devices are suitable for pick and place

insertion.

Each RF Port contains DC blocking Capacitors and a D.C. Bias

Network consisting of High Impedance Lines and RF bypass

capacitors. This device has 100 um square gold plated bonding

pads at all RF and DC ports. RF and DC Ground Backside Gold

Plating allows conventional chip bonding techniques using

80Au/20Sn Solder, Indalloy Solder, or Electrically Conductive

Silver Epoxy.

Outline Drawing

77 GHz GaAs SP3T

PIN Diode Switch

V 2.00

Applications

This highly reliable, very low parasitic SP3T is useable

through higher millimeter frequencies for exceptional loss to

isolation ratio and 2 nS switching speed performance. Typi-

cal Applications include Transceivers, Automotive Cruise

Control Systems, and Radiometry Switch Functions.

Parameter

Value

Operating Temperature

-25 °C to +85 °C

Storage Temperature

-65 °C to +150 °C

D.C. Bias Current

+15 mA per Diode

D. C. Reverse Bias Voltage

-15 Volts @ -10

µA

RF C.W. Incident Power

+ 23 dBm C.W.

Mounting Temperature

+300 °C for 10 seconds

Absolute Maximum Ratings

1

1. Exceeding any of these values may result in permanent

damage

Dim. Are in

µm