Electrical Characteristics (TC=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0V ID=250μA

60

-

-

V

Zero Gate Voltage Drain Current

IDSS

VDS=60V,VGS=0V

-

-

1

μA

Gate-Body Leakage Current

IGSS

VGS=±20V,VDS=0V

-

-

±100

nA

On Characteristics

(Note 3)

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=250μA

1.

0

3.0

V

Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=20A

-

27

mΩ

Forward Transconductance

gFS

VDS=5V,ID=20A

-

30

-

S

Dynamic Characteristics

(Note4)

Input Capacitance

Clss

-

1900

-

PF

Output Capacitance

Coss

-

130

-

PF

Reverse Transfer Capacitance

Crss

VDS=30V,VGS=0V,

F=1.0MHz

-

95

-

PF

Switching Characteristics

(Note 4)

Turn-on Delay Time

td(on)

-

5

-

nS

Turn-on Rise Time

tr

-

2.6

-

nS

Turn-Off Delay Time

td(off)

-

16.1

-

nS

Turn-Off Fall Time

tf

VDS=30V, RL=1.5Ω

VGS=10V,RG=3Ω

-

2.3

-

nS

Total Gate Charge

Qg

-

30

nC

Gate-Source Charge

Qgs

-

4.5

nC

Gate-Drain Charge

Qgd

VDS=30V,ID=20A,

VGS=10V

-

7.5

nC

Drain-Source Diode Characteristics

Diode Forward Voltage

(Note 3)

VSD

VGS=0V,IS=30A

-

1.2

V

Diode Forward Current

(Note 2)

IS

-

-

30

A

Reverse Recovery Time

trr

-

35

-

nS

Reverse Recovery Charge

Qrr

TJ = 25°C, IF =20A

di/dt = 100A/μs

(Note3)

-

53

-

nC

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

1.

Repetitive Rating: Pulse width limited by maximum junction temperature.

2.

Surface Mounted on FR4 Board, t ≤ 10 sec.

3.

Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4.

Guaranteed by design, not subject to production

5.

EAS condition:Tj=25 ,VDD=

℃

30V,VG=10V,L=0.5mH,Rg=25Ω

www.bychip.cn

FDD5680

v2.0