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FDD5680 Datasheet(PDF) 1 Page - BYCHIP ELECTRONICS CO., LIMITED |
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FDD5680 Datasheet(HTML) 1 Page - BYCHIP ELECTRONICS CO., LIMITED |
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1 / 4 page  Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 30 A Drain Current-Continuous(TC=100℃) ID (100℃) 20 A Pulsed Drain Current IDM 74 A Maximum Power Dissipation PD 50 W Derating factor 0.33 W/℃ Single pulse avalanche energy (Note 5) AS E 144 mJ Operating Junction and Storage Temperature Range TJ,TSTG -55 To 175 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Case (Note 2) RθJC 3 ℃ /W N-channel Enhancement Mode Power MOSFET Features VDS= 60V, ID= 30A RDS(ON) < 27 mΩ @ VGS = 10V RDS(ON) < 33 mΩ @ VGS = 4.5V ● Advanced Trench Technology ● Provide Excellent RDS(ON) and Low Gate Charge ● Lead Free and Green Available 100% UIS TESTED! 100% ΔVds TESTED! General Features www.bychip.cn Pin Assignment TO-252-2L Top View Schematic Diagram FDD5680 v1.0 |
Similar Part No. - FDD5680 |
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Similar Description - FDD5680 |
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