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PD55015-E Datasheet(PDF) 4 Page - STMicroelectronics

Part # PD55015-E
Description  RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

PD55015-E Datasheet(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
PD55015-E, PD55015S-E
4/27
2
Electrical characteristics
TCASE = +25
oC
2.1
Static
2.2
Dynamic
Table 3.
Static
Symbol
Test conditions
Min
Typ
Max
Unit
IDSS
VGS = 0V
VDS = 28V
1
µA
IGSS
VGS = 20V
VDS = 0V
1
µA
VGS(Q)
VDS = 10V
ID = 150mA
2.0
5.0
V
VDS(ON)
VGS = 10V
ID = 2.5A
0.8
V
gFS
VDS = 10V
ID = 2.5A
2.0
2.5
mho
CISS
VGS = 0V
VDS = 12.5V
f = 1MHz
89
pF
COSS
VGS = 0V
VDS = 12.5V
f = 1MHz
60
pF
CRSS
VGS = 0V
VDS = 12.5V
f = 1MHz
6.5
pF
Table 4.
Dynamic
Symbol
Test conditions
Min
Typ
Max
Unit
P1dB
VDD = 12.5V, IDQ = 150mA
f = 500MHz
15
W
GP
VDD = 12.5V, IDQ = 150mA, POUT = 15W, f = 500MHz
12
14
dB
nD
VDD = 12.5V, IDQ = 150mA, POUT = 15W, f = 500MHz
50
55
%
Load
mismatch
VDD = 15.5V, IDQ = 150mA, POUT = 15W, f = 500MHz
All phase angles
20:1
VSWR


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