PD55015-E datasheet(6/27 Pages) STMICROELECTRONICS

Part #	PD55015-E

Description	RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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Typical performance

PD55015-E, PD55015S-E

6/27

4

Typical performance

PD55015

Figure 2.

Capacitance vs drain voltage

Figure 3.

Drain current vs gate voltage

Figure 4.

Gate-source voltage vs

case temperature

0

5

10

15

20

25

30

VDS (V)

1

10

100

1000

C (pF)

Cis s

Co s s

Cr s s

f= 1 M H z

2.5

3

3.5

4

4.5

5

Vgs, GATE-SOURCE VOLTAGE (V)

0

0.5

1

1.5

2

2.5

3

3.5

4

VDS = 10 V

-25

0

25

50

75

Tc, CASE TEMPERATURE (°C)

0.96

0.98

1

1.02

1.04

ID = .25 A

ID

= 1A

ID = 1.5 A

ID = 2A

ID = 3A

VDS = 10 V

Figure 5.

Output power vs input power

Figure 6.

Power gain vs output power

0

0.2

0.4

0.6

0.8

1

Pin, INPUT POWER (W)

0

2

4

6

8

10

12

14

16

18

500 MHz

480 MHz

520 MHz

VDD = 12..5 V

IDQ = 150 mA

0

2

4

6

8

1012

141618

Pout, OUTPUT POWER (W)

10

12

14

16

18

500 MHz

480 MHz

520 MHz

Vdd = 12.5 V

Idq = 150 mA

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PD55015-E Datasheet(PDF) 6 Page - STMicroelectronics

PD55015-E Datasheet(HTML) 6 Page - STMicroelectronics

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