2N6660X datasheet(2/2 Pages) SEME-LAB

Part #	2N6660X

Description	N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR

PDF	2 Pages

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Manufacturer	SEME-LAB [Seme LAB]

Direct Link	http://www.semelab.co.uk

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2 / 2 page

DOC: 7083 iss 1

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk

Website: http://www.semelab.co.uk

2N6660X

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ELECTRICAL CHARACTERISTICS (T

CASE = 25°C unless otherwise stated)

BVDSS

Drain – Source Breakdown Voltage

VGS(th)

Gate Threshold Voltage

IGSS

Gate – Body Leakage Current

IDSS

Zero Gate Voltage Drain Current

ID(on)*

On–State Drain Current

RDS(on)* Drain – Source On Resistance

VDS(on)* Drain – Source On Voltage

gFS*

Forward Transconductance

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

tON

Turn–On Time

tOFF

Turn–Off Time

IS

Continuous Source Current

(Body Diode)

ISM

Source Current1 (Body Diode)

VSD

Diode Forward Voltage 1

VGS = 0V

ID = 10μA

VDS = VGS

ID = 1mA

VGS = ±15V

VDS = 0V

TCASE = 125°C

VDS = Max. Ratings VGS = 0V

VDS =0.8VMax.Ratings

VGS = 0V

TCASE = 125°C

VDS = ≥2VDS(ON) VGS = 10V

VGS = 5V

ID = 0.3A

VGS = 10V

ID = 1A

TCASE = 125°C

VGS = 5V

ID = 0.3A

VGS = 10V

ID = 1A

VDS = 25V

ID = 0.5A

VGS = 0V

VDS = 25V

f = 1MHz

VDD = 25V

ID = 1A

RL = 23Ω

RG = 25Ω

Modified MOSPOWER

Symbol Showing

The Integral

PN Juncion Rectifier

IS = -1.1A

VGS = 0V

TCASE = 125°C

60

100

0.8

1.5

2.2

1

±100

5

±500

110

50

500

1.5

1.7

4.7

5

2.7

3

3.9

4.2

1.4

1.5

2.7

3

170

195

35

50

33

40

210

810

-1.1

-3

-0.9

V

nA

μA

A

Ω

V

mS

pF

ns

A

V

STATIC CHARACTERISTICS

DYNAMIC CHARACTERISTICS

SWITCHING CHARACTERISTICS

BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS

1 Pulse Test: Pulse width

≤ 300 μs , Duty Cycle ≤ 2%

Parameter

Min.

Typ.

Max.

Unit

RθJA

Thermal Resistance, Junction to Ambient (Free Air Operation)

170

C/W

RθJC

Thermal Resistance, Junction to Case

20

C/W

,

5

/

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