IS61C256AL_06 datasheet(3/12 Pages) ISSI

Part #	IS61C256AL

Description	32K x 8 HIGH-SPEED CMOS STATIC RAM

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Manufacturer	ISSI [Integrated Silicon Solution, Inc]

Direct Link	http://www.issi.com

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Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

3

Rev. B

10/23/06

IS61C256AL

ISSI®

POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)

-10

-12

Symbol

Parameter

TestConditions

Min.

Max.

Min.

Max.

Unit

ICC1

VDDOperating

VDD= Max.,

CE=VIL

Com.

—

20

—

20

mA

SupplyCurrent

IOUT = 0 mA, f = 0

Ind.

—

25

ICC2

VDDDynamicOperating

VDD= Max.,

CE=VIL

Com.

—

45

—

35

mA

SupplyCurrent

IOUT = 0 mA, f = fMAX

Ind.

—

40

typ.(2)

25

ISB1

TTLStandbyCurrent

VDD=Max.,

Com.

—

1

—

1

mA

(TTLInputs)

VIN =VIH orVIL

Ind.

—

2

CE

≥VIH,f=0

ISB2

CMOSStandby

VDD=Max.,

Com.

—

350

—

350

µA

Current(CMOSInputs)

CE

≥VDD–0.2V,

Ind.

—

450

VIN

≥VDD–0.2V,or

typ.(2)

200

VIN

≤ 0.2V, f = 0

Note:

1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.

2. Typical values are measured at VDD = 5V, TA = 25oC and not 100% tested.

OPERATING RANGE

Range

Ambient Temperature

Speed (ns)

VDD (V)

Commercial

0°C to +70°C

-10

5V ± 5%

Commercial

0°C to +70°C

-12

5V ± 10%

Industrial

–40°C to +85°C

-12

5V ± 10%

DC ELECTRICAL CHARACTERISTICS (Over Operating Range)

Symbol Parameter

Test Conditions

Min.

Max.

Unit

VOH

Output HIGH Voltage

VDD = Min., IOH = –4.0 mA

2.4

—

V

VOL

Output LOW Voltage

VDD = Min., IOL = 8.0 mA

—

0.4

V

VIH

Input HIGH Voltage

2.2

VDD + 0.5

V

VIL

Input LOW Voltage(1)

–0.3

0.8

V

ILI

Input Leakage

GND

≤ VIN ≤ VDD

Com.

–1

1

µA

Ind.

–2

2

ILO

Output Leakage

GND

≤ VOUT ≤ VDD,

Com.

–1

1

µA

Outputs Disabled

Ind.

–2

2

Note: 1. VIL = –3.0V for pulse width less than 10 ns.

CAPACITANCE(1,2)

Symbol

Parameter

Conditions

Max.

Unit

CIN

Input Capacitance

VIN = 0V

8

pF

COUT

Output Capacitance

VOUT = 0V

10

pF

Notes:

1. Tested initially and after any design or process changes that may affect these parameters.

2. Test conditions: TA = 25°C, f = 1 MHz, VDD = 5.0V.

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