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BSS69-L2 Datasheet(PDF) 1 Page - Zetex Semiconductors |
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BSS69-L2 Datasheet(HTML) 1 Page - Zetex Semiconductors |
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1 / 1 page SOT23 PNP SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS ISSUE 2 SEPTEMBER 1995 7 PARTMARKING DETAILS BSS69 - L2 BSS70 - L3 BSS69R - L6 BSS70R - L7 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -200 mA Continuous Collector Current IC -100 mA Base Current IB -50 mA Power Dissipation at Tamb=25°C PTOT 330 mW Operating and Storage Temperature Range tj:tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb= 25°C). PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Collector-Emitter Breakdown Voltage V(BR)CEO -40 V IC=-1mA Collector-Base Breakdown Voltage V(BR)CBO -40 V IC=-10µA Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-10µA Collector- Emitter Cut-off Current ICES -50 nA VCES=-30V Collector-Emitter Saturation Voltage VCE(sat) -0.25 -0.40 V V IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA* Base-Emitter Saturation Voltage VBE(sat) -0.65 -0.85 -0.95 V V IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA* Static Forward Current BSS69 Transfer Ratio hFE 30 40 50 30 15 150 IC=-100µA, IC=-1mA, IC=-10mA, VCE=-1V IC=-50mA*, IC=-100mA*, Static Forward Current BSS70 Transfer Ratio hFE 60 80 100 60 30 300 IC=-100µA, IC=-1mA, IC=-10mA, VCE=-1V IC=-50mA*, IC=-100mA*, Transition Frequency BSS69 BSS70 fT 200 250 MHz MHz IC=-10mA, VCE=-20V f=100MHz Collector-Base Capacitance Cobo 4.5 pF VCB=-5V, f=100kHz Emitter-Base Capacitance Cibo 10 pF VEB=-0.5V, f=100kHz Noise Figure N Typ. 5 dB IC=-100µΑ, VCE=-5V RS=1kΩ, f=10Hz to15.7 kHz Switching times: Delay; Rise Storage Time Fall Time td; tf ts tf 35 225 70 ns ns ns VCC=-3V, IC=-10mA IB1= IB2 =-1mA *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% BSS69 BSS70 C B E PAGE NUMBER |
Similar Part No. - BSS69-L2 |
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Similar Description - BSS69-L2 |
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