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IRFR1N60APBF Datasheet(PDF) 1 Page - International Rectifier |
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IRFR1N60APBF Datasheet(HTML) 1 Page - International Rectifier |
1 / 10 page Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 1.4 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 0.89 A IDM Pulsed Drain Current 5.6 PD @TC = 25°C Power Dissipation 36 W Linear Derating Factor 0.28 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt 3.8 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C SMPS MOSFET HEXFET® Power MOSFET Absolute Maximum Ratings l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l Power Factor Correction l Lead-Free Benefits Applications l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current VDSS Rds(on) max ID 600V 7.0 Ω 1.4A Notes through
are on page 9 www.irf.com 1 12/03/04 Applicable Off Line SMPS Topologies: l Low Power Single Transistor Flyback D-Pak IRFR1N60A I-Pak IRFU1N60A IRFR1N60APbF IRFU1N60APbF PD - 95518A |
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