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IRFR1N60APBF Datasheet(PDF) 2 Page - International Rectifier |
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IRFR1N60APBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRFR/U1N60APbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 0.88 ––– ––– S VDS = 50V, ID = 0.84A Qg Total Gate Charge ––– ––– 14 ID = 1.4A Qgs Gate-to-Source Charge ––– ––– 2.7 nC VDS = 400V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 8.1 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 9.8 ––– VDD = 250V tr Rise Time ––– 14 ––– ID = 1.4A td(off) Turn-Off Delay Time ––– 18 ––– RG = 2.15Ω tf Fall Time ––– 20 ––– RD = 178Ω,See Fig. 10 Ciss Input Capacitance ––– 229 ––– VGS = 0V Coss Output Capacitance ––– 32.6 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 2.4 ––– pF ƒ = 1.0MHz, See Fig. 5 Coss Output Capacitance ––– 320 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 11.5 ––– VGS = 0V, VDS = 480V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 130 ––– VGS = 0V, VDS = 0V to 480V Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 600 ––– ––– V VGS = 0V, ID = 250µA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 7.0 Ω VGS = 10V, ID = 0.84A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA ––– ––– 25 µA VDS = 600V, VGS = 0V ––– ––– 250 VDS = 480V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -30V Static @ TJ = 25°C (unless otherwise specified) IGSS IDSS Drain-to-Source Leakage Current Dynamic @ TJ = 25°C (unless otherwise specified) ns Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 93 mJ IAR Avalanche Current ––– 1.4 A EAR Repetitive Avalanche Energy ––– 3.6 mJ Avalanche Characteristics S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.6 V TJ = 25°C, IS = 1.4A, VGS = 0V trr Reverse Recovery Time ––– 290 440 ns TJ = 25°C, IF = 1.4A Qrr Reverse RecoveryCharge ––– 510 760 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Diode Characteristics 1.4 5.6 A Parameter Typ. Max. Units RθJC Junction-to-Case ––– 3.5 RθJA Junction-to-Ambient (PCB mount) ––– 50 °C/W RθJA Junction-to-Ambient ––– 110 Thermal Resistance |
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