US5U29

Transistor

Rev.C

1/4

2.5V Drive Pch+SBD MOS FET

US5U29

Structure

External dimensions (Unit : mm)

Silicon P-channel MOS FET

Schottky Barrier DIODE

Features

1) The US5U29 combines Pch MOS FET with a

Schottky barrier diode in a TUMT5 package.

2) Low on-resistance with fast switching.

3) Low voltage drive (2.5V).

4) Built-in schottky barrier diode has low forward voltage.

Applications

Load switch, DC/DC conversion

Packaging specifications

Equivalent circuit

US5U29

TR

3000

Type

Package

Code

Taping

Basic ordering unit (pieces)

TUMT5

0.3

0.77

0.17

2.0

1.3

0.65 0.65

(2)

(1)

(3)

(5)

(4)

0~0.1

0.85Max.

Abbreviated symbol : U29

(1)Gate

(2)Source

(3)Anode

(4)Cathode

(5)Drain

∗1 ESD protection diode

∗2 Body diode

∗2

∗1

(1)

(2)

(5)

(3)

(4)