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NE567N Datasheet(PDF) 4 Page - NXP Semiconductors |
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NE567N Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 13 page Philips Semiconductors Linear Products Product specification NE/SE567 Tone decoder/phase-locked loop April 15, 1992 406 DC ELECTRICAL CHARACTERISTICS V +=5.0V; TA=25°C, unless otherwise specified. SYM- BOL PARAMETER TEST CONDITIONS SE567 NE567 UNIT Min Typ Max Min Typ Max Center frequency1 fO Highest center frequency 500 500 kHz fO Center frequency stability2 -55 to +125 °C 35 ±140 35 ±140 ppm/ °C 0 to +70 °C 35 ±60 35 ±60 ppm/ °C fO Center frequency distribution f O + 100kHz + 1 1.1R 1C1 -10 0 +10 -10 0 +10 % fO Center frequency shift with supply voltage f O + 100kHz + 1 1.1R 1C1 0.5 1 0.7 2 %/V Detection bandwidth BW Largest detection bandwidth f O + 100kHz + 1 1.1R 1C1 12 14 16 10 14 18 % of fO BW Largest detection bandwidth skew 2 4 3 6 % of fO BW Largest detection bandwidth— VI=300mVRMS ±0.1 ±0.1 %/ °C variation with temperature BW Largest detection bandwidth— VI=300mVRMS ±2 ±2 %/V variation with supply voltage Input RIN Input resistance 15 20 25 15 20 25 k Ω VI Smallest detectable input voltage4 IL=100mA, fI=fO 20 25 20 25 mVRMS Largest no-output input voltage4 IL=100mA, fI=fO 10 15 10 15 mVRMS Greatest simultaneous out-band +6 +6 dB signal-to-in-band signal ratio Minimum input signal to wide-band noise ratio Bn=140kHz -6 -6 dB Output Fastest on-off cycling rate fO/20 fO/20 “1” output leakage current V8=15V 0.01 25 0.01 25 µA “0” output voltage IL=30mA 0.2 0.4 0.2 0.4 V IL=100mA 0.6 1.0 0.6 1.0 V tF Output fall time3 RL=50Ω 30 30 ns tR Output rise time3 RL=50Ω 150 150 ns General VCC Operating voltage range 4.75 9.0 4.75 9.0 V Supply current quiescent 6 8 7 10 mA Supply current—activated RL=20kΩ 11 13 12 15 mA tPD Quiescent power dissipation 30 35 mW NOTES: 1. Frequency determining resistor R1 should be between 2 and 20kΩ 2. Applicable over 4.75V to 5.75V. See graphs for more detailed information. 3. Pin 8 to Pin 1 feedback RL network selected to eliminate pulsing during turn-on and turn-off. 4. With R2=130kΩ from Pin 1 to V+. See Figure 1. |
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