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CFK2162-P5 Datasheet(PDF) 2 Page - Mimix Broadband |
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CFK2162-P5 Datasheet(HTML) 2 Page - Mimix Broadband |
2 / 5 page ![]() 3236 Scott Boulevard Santa Clara, California 95054 Phone: (408) 986-5060 Fax: (408) 986-5095 CFK2162-P5 Features t High Gain t +34 dBm Power Output t Proprietary Power FET Process t >45% Linear Power Added Efficiency t +29 dBm with 30 dBc Third Order Products t Surface Mount SO-8 Power Package Applications t ISM Band Base Stations and Terminals t PCS/PCN Base Stations and Terminals t Wireless Local Loop Description The CFK2162-P5 is a high-gain FET intended for dri- ver amplifier applications in high-power systems, and output stage usage in medium power applications at power levels up to +34 dBm. The device is easily matched and provides excellent linearity at 2 Watts. Manufactured in Celeritek’s proprietary power FET process, this device is assembled in an industry standard surface mount SO-8 power package that is compatible with high volume, automated board assembly techniques. 2.3 to 2.5 GHz +34 dBm Power GaAs FET Product Specifications July 1997 (1 of 4) 1 3 4 7 8 6 5 2 G G D D Back Plane is Source GND GND GND GND Package Diagram Notes: 1. Sum to two tones with 1 MHz spacing = 29 dBm. 2. See thermal considerations information on page 4. 3. Max (+Vd) and (-Vg) under linear operation. Max potential difference across the device in RF compression (2Vd + |-Vg|) not to exceed the mini- mum breakdown voltage (Vbr) of +18V. Absolute Maximum Ratings Parameter Symbol Rating Drain-Source Voltage VDS 12V (3) Gate-Source Voltage VGS -5V Drain Current IDS Idss Continuous Dissipation PT 10W Channel Temperature TCH 175°C Storage Temperature TSTG -65°C to +175°C Parameters Conditions Min Typ Max Units Vd = 8V, Id = 800 mA (Quiescent) P-1dB 33.0 34.0 — dBm SSG 11.0 12.0 — dB 3rd Order Products (1) 26 30 — dBc Efficiency @ P1dB — 40 — % Vd = 5V, Id = 350 mA (Quiescent) P-1dB — 30.0 — dBm SSG — 9.0 — dB Vd = 5V, Id = 1200 mA (Quiescent) P-1dB — 32.5 — dBm SSG — 10.0 — dB Specifications (TA = 25°C) The following specifications are guaranteed at room temperature in Celeritek test fixture at 2.5 GHz. Parameters Conditions Min Typ Max Units gm Vds = 2.0V, Vgs = 0V — 1700 — mS Idss Vds = 2.0V, Vgs = 0V — 2.8 — A Vp Vds = 3.0V, Ids = 65 mA — -1.8 Volts BVGD (3) Igd = 6.5 mA 18 20 — Volts Θ JL (2) @150°C TCH — 10 — °C/W SO-8 Power Package Physical Dimensions |
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