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AM29LV800BB-120DGC2 Datasheet(PDF) 12 Page - Advanced Micro Devices |
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AM29LV800BB-120DGC2 Datasheet(HTML) 12 Page - Advanced Micro Devices |
12 / 12 page Am29LV800B Known Good Die 11 SU P P L E MEN T REVISION SUMMARY Revision A (March 1997) Initial release. Revision B (January 1998) Formatted to match current template. Updated Distinc- tive Characteristics and General Description sections using the current main data sheet. Updated for CS39 process technology. Revision B+1 (March 1998) Distinctive Characteristics Changed read and program/erase current to match data sheet. Pad Description Corrected signal names for pads 13–44. Replaced values for all pad coordinates. Revision C (November 1998) Die Photograph, Pad Description, Ordering Information, Physical Specifications, Manufacturing Information Updated for CS39S process technology. Ordering Information Changed waffle pack quantity to 140. Changed valid combinations to reflect die revision 2. Terms and Conditions Replaced warranty with new version. Revision D (December 1998) Packaging Information Added section. Moved orientation information from die photograph into this section. Revision D+1 (June 14, 1999) Physical Specifications Corrected the bond pad dimensions. Deleted Si from the bond pad metalization specification. Revision D+2 (July 2, 1999) Ordering Information The quantities for each packaging type is now listed. Contacting AMD for this information is no longer required. Revision E (March 12, 2002) Global Added 80 ns speed. Pad Description Added table of pad locations relative to die center. Manufacturing Information Changed test facility to Penang, Malaysia (ACN2016). Trademarks Copyright © 2002 Advanced Micro Devices, Inc. All rights reserved. AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc. Product names used in this publication are for identification purposes only and may be trademarks of their respective companies. |
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