IRFP460 datasheet(3/7 Pages) PHILIPS

Part #	IRFP460

Description	PowerMOS transistors Avalanche energy rated

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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Philips Semiconductors

Product specification

PowerMOS transistors

IRFP460

Avalanche energy rated

Fig.1. Normalised power dissipation.

PD% = 100

⋅P

D/PD 25 ˚C = f(Tmb)

Fig.2. Normalised continuous drain current.

ID% = 100

⋅I

D/ID 25 ˚C = f(Tmb); conditions: VGS ≥ 10 V

Fig.3. Safe operating area. T

mb = 25 ˚C

I

D & IDM = f(VDS); IDM single pulse; parameter tp

Fig.4. Transient thermal impedance.

Z

th j-mb = f(t); parameter D = tp/T

Fig.5. Typical output characteristics.

I

D = f(VDS); parameter VGS

Fig.6. Typical on-state resistance.

R

DS(ON) = f(ID); parameter VGS

0

20

40

60

80

100

120

140

Tmb / C

PD%

Normalised Power Derating

120

110

100

90

80

70

60

50

40

30

20

10

0

PHW20N50E

0.001

0.01

0.1

1

1E-06

1E-05

1E-04

1E-03

1E-02

1E-01

1E+00

1E+01

Pulse width, tp (s)

Zth j-mb (K/W)

single pulse

D = 0.5

0.2

0.1

0.05

0.02

tp

D = tp/T

D

P

T

0

20

40

60

80

100

120

140

Tmb / C

ID%

Normalised Current Derating

120

110

100

90

80

70

60

50

40

30

20

10

0

PHW20N50E

0

2

4

6

8

10

12

14

16

18

20

012

345

Drain-Source Voltage, VDS (V)

Drain Current, ID (A)

4 V

4.2 V

4.4 V

4.6 V

Tj = 25 C

VGS = 10 V

4.8 V

5 V

8 V

PHW20N50E

0.1

1

10

100

10

100

1000

Drain-Source Voltage, VDS (V)

Peak Pulsed Drain Current, IDM (A)

d.c.

100 ms

10 ms

RDS(on) = VDS/ ID

tp = 10 us

1 ms

100us

PHW20N50E

0.2

0.25

0.3

0.35

0.4

0.45

0.5

0

2

4

6

8

1012

1416

1820

Drain Current, ID (A)

Drain-Source On Resistance, RDS(on) (Ohms)

VGS = 6 V

4V 4.2V

4.8V

10V

Tj = 25 C

5V

4.6 V

4.4 V

September 1999

3

Rev 1.000

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