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IRF630 Datasheet(PDF) 4 Page - NXP Semiconductors |
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IRF630 Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 9 page Philips Semiconductors Product specification N-channel TrenchMOS ™ transistor IRF630, IRF630S Fig.1. Normalised power dissipation. PD% = 100 ⋅P D/PD 25 ˚C = f(Tmb) Fig.2. Normalised continuous drain current. ID% = 100 ⋅I D/ID 25 ˚C = f(Tmb); VGS ≥ 10 V Fig.3. Safe operating area I D & IDM = f(VDS); IDM single pulse; parameter tp Fig.4. Transient thermal impedance. Z th j-mb = f(t); parameter D = tp/T Fig.5. Typical output characteristics, T j = 25 ˚C. I D = f(VDS) Fig.6. Typical on-state resistance, T j = 25 ˚C. R DS(ON) = f(ID) Normalised Power Derating, PD (%) 0 10 20 30 40 50 60 70 80 90 100 0 25 50 75 100 125 150 175 Mounting Base temperature, Tmb (C) 0.01 0.1 1 10 1E-06 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 Pulse width, tp (s) Transient thermal impedance, Zth j-mb (K/W) single pulse D = 0.5 0.2 0.1 0.05 0.02 tp D = tp/T D P T Normalised Current Derating, ID (%) 0 10 20 30 40 50 60 70 80 90 100 0 25 50 75 100 125 150 175 Mounting Base temperature, Tmb (C) 0 1 2 3 4 5 6 7 8 9 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 Drain-Source Voltage, VDS (V) Drain Current, ID (A) 5 V Tj = 25 C VGS = 10V 5.5 V 6 V 8 V 4.5 V 0.1 1 10 100 1 10 100 1000 Drain-Source Voltage, VDS (V) Peak Pulsed Drain Current, IDM (A) D.C. 100 ms 10 ms RDS(on) = VDS/ ID 1 ms tp = 10 us 100 us 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 01 23 45 67 89 10 Drain Current, ID (A) Drain-Source On Resistance, RDS(on) (Ohms) VGS = 10V Tj = 25 C 8 V 5 V 6 V 5.5 V 4.5 V August 1999 4 Rev 1.100 |
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