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IRF630 Datasheet(PDF) 3 Page - NXP Semiconductors |
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IRF630 Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 9 page Philips Semiconductors Product specification N-channel TrenchMOS ™ transistor IRF630, IRF630S REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS T j = 25˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I S Continuous source current - - 9 A (body diode) I SM Pulsed source current (body - - 36 A diode) V SD Diode forward voltage I F = 9 A; VGS = 0 V - 0.85 1.2 V t rr Reverse recovery time I F = 9 A; -dIF/dt = 100 A/µs; - 92 - ns Q rr Reverse recovery charge V GS = -10 V; VR = 25 V - 0.5 - µC August 1999 3 Rev 1.100 |
Similar Part No. - IRF630 |
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Similar Description - IRF630 |
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