Philips Semiconductors

Product specification

N-channel TrenchMOS

™ transistor

IRF630, IRF630S

AVALANCHE ENERGY LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

E

AS

Non-repetitive avalanche

Unclamped inductive load, I

-

250

mJ

energy

t

V

to fig;14

I

AS

Peak non-repetitive

-

9

A

avalanche current

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

MIN.

TYP. MAX. UNIT

R

th j-mb

Thermal resistance junction

-

-

1.7

K/W

to mounting base

R

th j-a

Thermal resistance junction

SOT78 package, in free air

-

60

-

K/W

to ambient

SOT404 package, pcb mounted, minimum

-

50

-

K/W

footprint

ELECTRICAL CHARACTERISTICS

T

unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN.

TYP. MAX. UNIT

V

(BR)DSS

Drain-source breakdown

V

200

-

-

V

voltage

T

178

-

-

V

V

GS(TO)

Gate threshold voltage

V

2

3

4

V

T

1

-

-

V

T

-

6

V

R

DS(ON)

Drain-source on-state

V

-

300

400

m

Ω

resistance

T

-

-

1.12

Ω

g

fs

Forward transconductance

V

3.8

9

-

S

I

GSS

Gate source leakage current V

-

10

100

nA

I

DSS

Zero gate voltage drain

V

-

0.05

10

µA

current

V

-

-

250

µA

Q

g(tot)

Total gate charge

I

-

-

39

nC

Q

gs

Gate-source charge

-

-

6.3

nC

Q

gd

Gate-drain (Miller) charge

-

-

21

nC

t

d on

Turn-on delay time

V

8

-

ns

t

r

Turn-on rise time

V

-19

-

ns

t

d off

Turn-off delay time

Resistive load

-

25

-

ns

t

f

Turn-off fall time

-

15

-

ns

L

d

Internal drain inductance

Measured tab to centre of die

-

3.5

-

nH

L

d

Internal drain inductance

Measured from drain lead to centre of die

-

4.5

-

nH

(SOT78 package only)

L

s

Internal source inductance

Measured from source lead to source

-

7.5

-

nH

bond pad

C

iss

Input capacitance

V

-

959

-

pF

C

oss

Output capacitance

-

93

-

pF

C

rss

Feedback capacitance

-

54

-

pF

August 1999

2

Rev 1.100