Philips Semiconductors

Product specification

N-channel TrenchMOS

™ transistor

IRF630, IRF630S

FEATURES

SYMBOL

QUICK REFERENCE DATA

• ’Trench’ technology

• Low on-state resistance

V

• Fast switching

• Low thermal resistance

I

R

GENERAL DESCRIPTION

N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line

switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits

and general purpose switching applications.

The IRF630 is supplied in the SOT78 (TO220AB) conventional leaded package

The IRF630S is supplied in the SOT404 (D

PINNING

SOT78 (TO220AB)

SOT404 (D

PIN

DESCRIPTION

1

gate

2

drain

1

3

source

tab

drain

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

DSS

Drain-source voltage

T

-

200

V

V

DGR

Drain-gate voltage

T

-

200

V

V

GS

Gate-source voltage

-

± 20

V

I

D

Continuous drain current

T

25 ˚C; V

-

9

A

T

-

6.3

A

I

DM

Pulsed drain current

T

-

36

A

P

D

Total power dissipation

T

-

88

W

T

Operating junction and

- 55

175

˚C

storage temperature

d

g

s

13

tab

2

12 3

tab

1 It is not possible to make connection to pin:2 of the SOT404 package

August 1999

1

Rev 1.100