IRF630 datasheet(5/9 Pages) PHILIPS

Part #	IRF630

Description	N-channel TrenchMOS transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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Philips Semiconductors

Product specification

N-channel TrenchMOS

™ transistor

IRF630, IRF630S

Fig.7. Typical transfer characteristics.

I

D = f(VGS)

Fig.8. Typical transconductance, T

j = 25 ˚C.

g

fs = f(ID)

Fig.9. Normalised drain-source on-state resistance.

R

DS(ON)/RDS(ON)25 ˚C = f(Tj)

Fig.10. Gate threshold voltage.

V

GS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS

Fig.11. Sub-threshold drain current.

I

D = f(VGS); conditions: Tj = 25 ˚C

Fig.12. Typical capacitances, C

iss, Coss, Crss.

C = f(V

DS); conditions: VGS = 0 V; f = 1 MHz

0

1

2

3

4

5

6

7

8

9

10

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

5.5

6

Gate-source voltage, VGS (V)

Drain current, ID (A)

VDS > ID X RDS(ON)

Tj = 25 C

175 C

Threshold Voltage, VGS(TO) (V)

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

-60

-40

-20

0

20

40

60

80

100 120 140 160 180

Junction Temperature, Tj (C)

typical

maximum

minimum

0

1

2

3

4

5

6

7

8

9

10

11

12

13

14

012

34567

89

10

Drain current, ID (A)

Transconductance, gfs (S)

Tj = 25 C

175 C

VDS > ID X RDS(ON)

Drain current, ID (A)

1.0E-06

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

Gate-source voltage, VGS (V)

minimum

typical

maximum

Normalised On-state Resistance

0.5

0.7

0.9

1.1

1.3

1.5

1.7

1.9

2.1

2.3

2.5

2.7

2.9

-60

-40

-20

0

20

40

60

80

100 120 140 160 180

Junction temperature, Tj (C)

10

100

1000

10000

0.1

1

10

100

Drain-Source Voltage, VDS (V)

Capacitances, Ciss, Coss, Crss (pF)

Ciss

Coss

Crss

August 1999

5

Rev 1.100

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