NFAM1512L7B

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5

ABSOLUTE MAXIMUM RATINGS (VDD = 15 V and Tj = 25°C, Unless Otherwise Specified)

Symbol

Rating

Conditions

Value

Unit

INVERTER PART

VPN

Supply Voltage

Applied between P − NU, NV, NW

900

V

VPN(Surge)

Supply Voltage (Surge)

Applied between P − NU, NV, NW

(Note 1)

1000

V

Vces

Collector − Emitter Voltage

1200

V

VRRM

Maximum Repetitive Revers Voltage

1200

V

±Ic

Each IGBT Collector Current

15

A

±Icp

Each IGBT Collector Current (Peak)

Tc = 25°C, Tj ≤ 150°C,

under 1 ms Pulse Width

30

A

Pc

Corrector Dissipation

Tc = 25°C per one chip (Note 2)

109

W

Tj

Operating Junction Temperature

−40 ~ 150

°C

CONTROL PART

VDD

Control Supply Voltage

Applied between VDD(H), VDD(L) − VSS

20

V

VBS

High−Side Control Bias Voltage

Applied between VB(U) − VS(U),

VB(V) − VS(V), VB(W) − VS(W)

20

V

VIN

Input Signal Voltage

Applied between HIN(U), HIN(V), HIN(W),

LIN(U), LIN(V), LIN(W) − VSS

−0.3 ~ VDD + 0.3

V

VFO

Fault Output Supply Voltage

Applied between VFO − VSS

−0.3 ~ VDD + 0.3

V

IFO

Fault Output Current

Sink Current at VFO pin

2

mA

VCIN

Current Sensing Input Voltage

Applied between CIN − VSS

−0.3 ~ VDD + 0.3

V

TOTAL SYSTEM

VPN(PROT)

Self−Protection Supply Voltage Limit

(Short Circuit Protection Capability)

VDD = VBS = 13.5 ~ 16.5 V, Tj = 150°C,

Non−repetitive, <2 ms

800

V

Tc

Case Operation Temperature

See Figure 1

−40 ~ 125

°C

Tstg

Storage Temperature

−40 ~ 125

°C

Viso

Isolation Voltage

60 Hz, Sinusoidal, AC 1 minute,

Connection Pins to Heat Sink Plate

2500

Vrms

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. Surge voltage developed by the switching operation due to the wiring inductance between P and NU, NV, NW terminal.

2. Calculation value considered to design factor.

THERMAL CHARACTERISTICS

Symbol

Rating

Conditions

Min

Typ

Max

Unit

Rth(j−c)Q

Junction to Case Thermal

Resistance (Note 3)

Inverter IGBT Part (per 1/6 Module)

−

−

1.15

°C/W

Rth(j−c)F

Inverter FWDi Part (per 1/6 Module)

−

−

1.80

°C/W

3. For the measurement point of case temperature (Tc), please refer to Figure 1.