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HEF4518BP Datasheet(PDF) 5 Page - NXP Semiconductors |
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HEF4518BP Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 7 page January 1995 5 Philips Semiconductors Product specification Dual BCD counter HEF4518B MSI AC CHARACTERISTICS VSS = 0 V; Tamb =25 °C; input transition times ≤ 20 ns VDD V TYPICAL FORMULA FOR P ( µW) Dynamic power 5 750fi +∑ (foCL) × VDD2 where dissipation per 10 3300 fi +∑ (foCL) × VDD2 fi = input freq. (MHz) package (P) 15 8000 fi +∑ (foCL) × VDD2 fo = output freq. (MHz) CL = load capacitance (pF) ∑ (f oCL) = sum of outputs VDD = supply voltage (V) Fig.4 Waveforms showing recovery time for MR; minimum CP0, CP1 and MR pulse widths. |
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