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SNA-200 Datasheet(PDF) 1 Page - SIRENZA MICRODEVICES |
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SNA-200 Datasheet(HTML) 1 Page - SIRENZA MICRODEVICES |
1 / 3 page 1 Product Description EDS-102429 Rev C 303 South Technology Court Phone: (800) SMI-MMIC http://www.sirenza.com Broomfield, CO 80021 The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights reserved. Sirenza Microdevices’ SNA-200 is a GaAs monolithic broadband amplifier (MMIC) in die form. At 1950 MHz, this amplifier provides 16dB of gain when biased at 50mA. These unconditionally stable amplifiers are designed for use as general purpose 50 ohm gain blocks. Its small size (0.33mm x 0.33mm) and gold metallization make it an ideal choice for use in hybrid circuits. External DC decoupling capacitors determine low frequency response. The use of an external resistor allows for bias flexibility and stability. The SNA-200 is supplied in gel paks at 100 devices per pak. Also available in packaged form (SNA-276 & SNA-286) SNA-200 DC-6.5 GHz, Cascadable GaAs MMIC Amplifier Not Recommended for New Designs, Use SNA-200S Product Features • Cascadable 50 Ohm Gain Block • 16dB Gain, +14dBm P1dB • 1.5:1 Input and Output VSWR • Operates From Single Supply • Chip Back Is Ground Output Power vs. Frequency 12 13 14 15 16 0.5 1 1.5 2 4 6 8 10 dBm GHz l o b m y S r e t e m a r a P s t i n U y c n e u q e r F . n i M . p y T . x a M G P n i a G r e w o P l a n g i S ll a m S B d B d B d z H M 0 5 8 z H M 0 5 9 1 z H M 0 0 4 2 0 . 6 1 5 . 5 1 3 . 5 1 G F s s e n t a l F n i a GB d z H G 0 . 4 - 1 . 0 - / + 0 . 1 B d 3 W Bh t d i w d n a B B d 3z H G 5 . 6 P B d 1 n o i s s e r p m o C B d 1 t a r e w o P t u p t u Om B d 0 5 9 1M z H 1 4 0 . F Ne r u g i F e s i o NB d 0 5 9 1M z H 5.5 R W S Vt u p t u O / t u p n I - z H G 5 . 6 - 1 . 0 1 : 5 . 1 O P I 3 t u p t u O t n i o P t p e c r e t n I r e d r O d r i h T m B d 0 5 9 1M z H 0 . 7 2 L O S In o i t a l o s I e s r e v e RB d z H G 5 . 6 - 1 . 00 2 V D e g a t l o V g n i t a r e p O e c i v e D V . 3 3 8 . 3 . 4 3 I D t n e r r u C g n i t a r e p O e c i v e DA m5 40 55 5 T d / G d e c i v e D n i a G t n e i c i f f e o C e r u t a r e p m e T B d C ° / 1 0 0 . 0 - 8 R H T b - j , ) e d i s k c a b o t n o i t c n u j ( e c n a t s i s e R l a m r e h T W / C ° 0 7 2 Test Conditions: V S = 8 V I D = 50 mA Typ. OIP 3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm R BIAS = 82 Ohms T L = 25ºC Z S = ZL = 50 Ohms |
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