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CEP80N75 Datasheet(PDF) 1 Page - Chino-Excel Technology

Part # CEP80N75
Description  N-Channel Enhancement Mode Field Effect Transistor
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Manufacturer  CET [Chino-Excel Technology]
Direct Link  http://www.cetsemi.com
Logo CET - Chino-Excel Technology

CEP80N75 Datasheet(HTML) 1 Page - Chino-Excel Technology

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N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
TO-220 & TO-263 & TO-220F full-pak for through hole.
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Units
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
PD
IDM f
75
1.3
200
320
80
±20
V
W
A
A
V
W/ C
1
S
G
D
G
S
D
CEB SERIES
TO-263(DD-PAK)
S
D
G
CEP SERIES
TO-220
CEF SERIES
TO-220F
S
D
G
Type
VDSS
RDS(ON)
ID
@VGS
CEP80N75
75V
13mΩ
80A
10V
0.5
75
320 e
80 e
CEB80N75
75V
80A
10V
Lead free product is acquired.
http://www.cetsemi.com
13mΩ
CEF80N75
75V
80A e
10V
13mΩ
TO-220/263
TO-220F
CEP80N75/CEB80N75
CEF80N75
Rev 2. 2007.Feb
Details are subject to change without notice .
Operating and Store Temperature Range
Single Pulsed Avalanche Energy d
Single Pulsed Avalanche Current d
EAS
TJ,Tstg
IAS
-55 to 175
45
880
A
mJ
C
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Parameter
Symbol
Limit
Units
C/W
C/W
62.5
0.75
RθJC
RθJA
45
880
2
65


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