CEP13N10 datasheet(1/4 Pages) CET

Part #	CEP13N10

Description	N-Channel Enhancement Mode Field Effect Transistor

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Manufacturer	CET [Chino-Excel Technology]

Direct Link	http://www.cetsemi.com

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N-Channel Enhancement Mode Field Effect Transistor

CEP13N10/CEB13N10

FEATURES

100V, 12.8A, RDS(ON) = 180mΩ @VGS = 10V.

Super high dense cell design for extremely low RDS(ON).

High power and current handing capability.

TO-220 & TO-263 package.

ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

Parameter

Symbol

Limit

Units

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Pulsed a

Maximum Power Dissipation @ TC = 25 C

- Derate above 25 C

VDS

VGS

ID

PD

IDM

100

0.43

65

50

12.8

±20

V

W

A

V

W/ C

1

S

G

D

G

S

D

G

CEB SERIES

TO-263(DD-PAK)

CEP SERIES

TO-220

Lead free product is acquired.

2005.August

http://www.cetsemi.com

Operating and Store Temperature Range

TJ,Tstg

-55 to 175

C

Thermal Characteristics

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

Parameter

Symbol

Limit

Units

C/W

62.5

2.3

R

θJC

R

θJA

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CEP13N10 Datasheet(PDF) 1 Page - Chino-Excel Technology

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