CEP13N10 datasheet(4/4 Pages) CET

Part #	CEP13N10

Description	N-Channel Enhancement Mode Field Effect Transistor

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Manufacturer	CET [Chino-Excel Technology]

Direct Link	http://www.cetsemi.com

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Qg, Total Gate Charge (nC)

Figure 7. Gate Charge

VDS, Drain-Source Voltage (V)

Figure 8. Maximum Safe

Operating Area

Figure 9. Switching Test Circuit

Figure 10. Switching Waveforms

t

V

t

d(on)

OUT

IN

on

r

10%

td(off)

90%

10%

50%

90%

toff

tf

90%

PULSE WIDTH

INVERTED

VDD

R

D

V

R

S

V

G

GS

IN

GEN

OUT

L

Square Wave Pulse Duration (msec)

Figure 11. Normalized Thermal Transient Impedance Curve

10

-2

PDM

t1

t2

1. RθJC (t)=r (t) * RθJC

2. RθJC=See Datasheet

3. TJM-TC = P* RθJC (t)

4. Duty Cycle, D=t1/t2

10

0

Single Pulse

0.01

10

-1

10

-2

10

3

10

4

10

2

10

1

10

0

10

-1

0.02

0.05

0.1

0.2

D=0.5

10

8

6

4

2

0

2

4

6

12

V

DS=80V

I

D=12.8A

8

10

4

CEP13N10/CEB13N10

10

-1

10

1

10

0

10

2

10

2

10

1

10

0

10

-1

Single Pulse

T

C=25 C

T

J=175 C

R

DS(ON)Limit

10ms

DC

100

µs

1ms

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CEP13N10 Datasheet(PDF) 4 Page - Chino-Excel Technology

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