CEP13N10 datasheet(3/4 Pages) CET

Part #	CEP13N10

Description	N-Channel Enhancement Mode Field Effect Transistor

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Manufacturer	CET [Chino-Excel Technology]

Direct Link	http://www.cetsemi.com

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3 / 4 page

3

Ciss

Coss

Crss

600

500

400

300

200

100

0

5

10

15

20

25

VDS, Drain-to-Source Voltage (V)

Figure 1. Output Characteristics

VGS, Gate-to-Source Voltage (V)

Figure 2. Transfer Characteristics

VDS, Drain-to-Source Voltage (V)

Figure 3. Capacitance

TJ, Junction Temperature( C)

Figure 4. On-Resistance Variation

with Temperature

2.6

2.2

1.8

1.4

1.0

0.6

0.2

V

GS=10V

I

D=6A

-100

-50

0

50

100

150

200

TJ, Junction Temperature( C)

Figure 5. Gate Threshold Variation

with Temperature

1.3

1.2

1.1

1.0

0.9

0.8

0.7

0.6

V

DS=VGS

I

D=250µA

-50

-25

0

25

50

75

100

125

150

VSD, Body Diode Forward Voltage (V)

Figure 6. Body Diode Forward Voltage

Variation with Source Current

0.2

0.6

1.0

1.4

10

0

10

-1

10

1

2.2

1.8

V

GS=0V

CEP13N10/CEB13N10

20

15

10

5

0

1

2

3

4

25

5

6

7

T

J=125 C

-55 C

25 C

20

16

12

8

4

0

2

4

8

6

24

10

V

GS=10,9,8V

V

GS=5V

V

GS=6V

V

GS=7V

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CEP13N10 Datasheet(PDF) 3 Page - Chino-Excel Technology

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