CEP13N10/CEB13N10

Parameter

Symbol

Min

Units

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Forwand Transconductance

Gate Threshold Voltage

Static Drain-Source

On-Resistance

180

140

2

4

-100

100

1

m

Ω

V

nA

nA

µ

A

V

S

2

Gate Body Leakage Current, Reverse

Input Capacitance

Reverse Transfer Capacitance

Output Capacitance

Turn-On Delay Time

Turn-Off Fall Time

Turn-Off Delay Time

Turn-On Rise Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current

Test Condition

Typ

Max

100

f = 1.0 MHz

295

85

35

10

8

17

8

20

16

35

16

12

3.3

5.3

16

12.8

1.5

5

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

A

V

4

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature

b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.

c.Guaranteed by design, not subject to production testing.