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FDPF20N50 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FDPF20N50 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 10 page  2 www.fairchildsemi.com FDP20N50 / FDPF20N50 Rev. B Package Marking and Ordering Information Electrical Characteristics T C = 25°C unless otherwise noted NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 5.0mH, IAS = 20A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 20A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics Device Marking Device Package Reel Size Tape Width Quantity FDP20N50 FDP20N50 TO-220 - - 50 FDPF20N50 FDPF20N50 TO-220F - - 50 Symbol Parameter Conditions Min. Typ. Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA 500 -- -- V ∆BV DSS / ∆T J Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C-- 0.5 -- V/ °C IDSS Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V VDS = 400V, TC = 125°C -- -- -- -- 1 10 µA µA IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA3.0 -- 5.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 10A -- 0.20 0.23 Ω gFS Forward Transconductance VDS = 40V, ID = 10A (Note 4) -- 24.6 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz -- 2400 3120 pF Coss Output Capacitance -- 355 465 pF Crss Reverse Transfer Capacitance -- 27 -- pF Switching Characteristics td(on) Turn-On Delay Time VDD = 250V, ID = 20A RG = 25Ω (Note 4, 5) -- 95 200 ns tr Turn-On Rise Time -- 375 760 ns td(off) Turn-Off Delay Time -- 100 210 ns tf Turn-Off Fall Time -- 105 220 ns Qg Total Gate Charge VDS = 400V, ID = 20A VGS = 10V (Note 4, 5) -- 45.6 59.5 nC Qgs Gate-Source Charge -- 14.8 -- nC Qgd Gate-Drain Charge -- 21.6 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 20 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 80 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 20A -- -- 1.4 V trr Reverse Recovery Time VGS = 0V, IS = 20A dIF/dt =100A/µs (Note 4) -- 507 -- ns Qrr Reverse Recovery Charge -- 7.20 -- µC |
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