©2007 Fairchild Semiconductor Corporation

1

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FDP20N50 / FDPF20N50 Rev. B

February 2007

UniFET

TM

FDP20N50 / FDPF20N50

500V N-Channel MOSFET

Features

• Low gate charge ( typical 45.6 nC)

•Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize

on-state

resistance,

provide

superior

switching

performance, and withstand high energy pulse in the avalanche

and commutation mode. These devices are well suited for high

efficient switched mode power supplies and active power factor

correction.

Absolute Maximum Ratings

Thermal Characteristics

TO-220

FDP Series

G

S

D

TO-220F

FDPF Series

G

S

D

D

G

S

Symbol

Parameter

FDP20N50

FDPF20N50

Unit

Drain-Source Voltage

500

V

Drain Current

20

12.9

20 *

12.9 *

A

A

Drain Current

- Pulsed

(Note 1)

80

80 *

A

Gate-Source voltage

±30

V

Single Pulsed Avalanche Energy

(Note 2)

1110

mJ

Avalanche Current

(Note 1)

20

A

Repetitive Avalanche Energy

(Note 1)

25

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

4.5

V/ns

Power Dissipation

- Derate above 25

°C

250

2.0

62

0.5

W

W/

°C

Operating and Storage Temperature Range

-55 to +150

°C

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

°C

Symbol

Parameter

FDP20N50

FDPF20N50

Unit

Thermal Resistance, Junction-to-Case

0.5

2.0

°C/W

Thermal Resistance, Case-to-Sink Typ.

0.5

--

°C/W

Thermal Resistance, Junction-to-Ambient

62.5

62.5

°C/W

* Drain current limited by maximum junction temperature