FDPF20N50 datasheet(3/10 Pages) FAIRCHILD

Part #	FDPF20N50

Description	500V N-Channel MOSFET

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

Direct Link	http://www.fairchildsemi.com

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FDP20N50 / FDPF20N50 Rev. B

Typical Performance Characteristics

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs.

Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage

Variation vs. Source Current

and Temperatue

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

24

68

10

12

10

0

10

1

10

2

150

oC

25

oC

-55

oC

* Notes :

1. V

DS

= 40V

2. 250µs Pulse Test

V

GS

, Gate-Source Voltage [V]

10

-1

10

0

10

1

10

0

10

1

V

GS

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

Bottom :

5.5 V

* Notes :

1. 250µs Pulse Test

2. T

C

= 25

o

C

V

DS

, Drain-Source Voltage [V]

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

10

0

10

1

150

o

C

*Notes :

1. V

GS

= 0V

2. 250µs Pulse Test

25

o

C

V

SD

, Source-Drain voltage [V]

0

1530

45

607590

0.0

0.2

0.4

0.6

0.8

V

GS

= 20V

V

GS

= 10V

* Note : T

J

= 25

o

C

I

D

, Drain Current [A]

0

10

2030

4050

0

2

4

6

8

10

12

V

DS

= 250V

V

DS

= 100V

V

DS

= 400V

* Note : I

D

= 20A

Q

G

, Total Gate Charge [nC]

10

-1

10

0

10

1

0

1000

2000

3000

4000

5000

6000

C

iss

= C

gs

+ C

gd

(C

ds

= shorted)

C

oss

= C

ds

+ C

gd

C

rss

= C

gd

* Note :

1. V

GS

= 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

V

DS

, Drain-Source Voltage [V]

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