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AT45DB321D Datasheet(PDF) 9 Page - ATMEL Corporation |
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AT45DB321D Datasheet(HTML) 9 Page - ATMEL Corporation |
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9 / 55 page  9 3597H–DFLASH–02/07 AT45DB321D [Preliminary] 7.4 Page Erase The Page Erase command can be used to individually erase any page in the main memory array allowing the Buffer to Main Memory Page Program to be utilized at a later time. To perform a page erase in the DataFlash standard page size (528 bytes), an opcode of 81H must be loaded into the device, followed by three address bytes comprised of 1 don’t care bit, 13 page address bits (PA12 - PA0) that specify the page in the main memory to be erased and 10 don’t care bits. To perform a page erase in the binary page size (512 bytes), the opcode 81H must be loaded into the device, followed by three address bytes consist of 2 don’t care bits, 13 page address bits (A21 - A9) that specify the page in the main memory to be erased and 9 don’t care bits. When a low-to-high transition occurs on the CS pin, the part will erase the selected page (the erased state is a logical 1). The erase operation is internally self-timed and should take place in a maxi- mum time of t PE. During this time, the status register and the RDY/BUSY pin will indicate that the part is busy. 7.5 Block Erase A block of eight pages can be erased at one time. This command is useful when large amounts of data has to be written into the device. This will avoid using multiple Page Erase Commands. To perform a block erase for the DataFlash standard page size (528 bytes), an opcode of 50H must be loaded into the device, followed by three address bytes comprised of 1 don’t care bit, 10 page address bits (PA12 -PA3) and 13 don’t care bits. The 10 page address bits are used to specify which block of eight pages is to be erased. To perform a block erase for the binary page size (512 bytes), the opcode 50H must be loaded into the device, followed by three address bytes consisting of 2 don’t care bits, 10 page address bits (A21 - A12) and 12 don’t care bits. The 10 page address bits are used to specify which block of eight pages is to be erased. When a low-to-high transition occurs on the CS pin, the part will erase the selected block of eight pages. The erase operation is internally self-timed and should take place in a maximum time of t BE. During this time, the status register and the RDY/BUSY pin will indicate that the part is busy. Table 7-1. Block Erase Addressing PA12/ A21 PA11/ A20 PA10/ A19 PA9/ A18 PA8/ A17 PA7/ A16 PA6/ A15 PA5/ A14 PA4/ A13 PA3/ A12 PA2/ A11 PA1/ A10 PA0/ A9 Block 0 0 0 0000 000 X X X 0 0 0 0 0000 001 X X X 1 0 0 0 0000 010 X X X 2 0 0 0 0000 011 X X X 3 • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • 1 1 1 1111 100 X X X 1020 1 1 1 1111 101 X X X 1021 1 1 1 1111 110 X X X 1022 1 1 1 1111 111 X X X 1023 |
Similar Part No. - AT45DB321D_07 |
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Similar Description - AT45DB321D_07 |
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