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AT45DB642D-TU Datasheet(PDF) 10 Page - ATMEL Corporation |
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AT45DB642D-TU Datasheet(HTML) 10 Page - ATMEL Corporation |
10 / 55 page ![]() 10 3542F–DFLASH–09/06 AT45DB642D page in main memory that is being programmed has been previously erased using one of the erase commands (Page Erase or Block Erase). The programming of the page is internally self- timed and should take place in a maximum time of t P. During this time, the status register and the RDY/BUSY pin will indicate that the part is busy. 7.4 Page Erase The Page Erase command can be used to individually erase any page in the main memory array allowing the Buffer to Main Memory Page Program to be utilized at a later time. To perform a page erase in the standard DataFlash page size (1056 bytes), an opcode of 81H must be loaded into the device, followed by three address bytes comprised of 13 page address bits (PA12 - PA0) that specify the page in the main memory to be erased and 11 don’t care bits. To perform a page erase in the binary page size (1024 bytes), the opcode 81H must be loaded into the device, followed by three address bytes consist of 13 page address bits (A22 - A10) that specify the page in the main memory to be erased and 10 don’t care bits. When a low-to-high transition occurs on the CS pin, the part will erase the selected page (the erased state is a logical 1). The erase operation is internally self-timed and should take place in a maximum time of t PE. During this time, the status register and the RDY/BUSY pin will indicate that the part is busy. 7.5 Block Erase A block of eight pages can be erased at one time. This command is useful when large amounts of data has to be written into the device. This will avoid using multiple Page Erase Commands. To perform a block erase for the standard DataFlash page size (1056 bytes), an opcode of 50H must be loaded into the device, followed by three address bytes comprised of 10 page address bits (PA12 -PA3) and 14 don’t care bits. The 10 page address bits are used to specify which block of eight pages is to be erased. To perform a block erase for the binary page size (1024 bytes), the opcode 50H must be loaded into the device, followed by three address bytes consist- ing of 10 page address bits (A22 - A13) and 13 don’t care bits. The 10 page address bits are used to specify which block of eight pages is to be erased. When a low-to-high transition occurs on the CS pin, the part will erase the selected block of eight pages. The erase operation is inter- nally self-timed and should take place in a maximum time of t BE. During this time, the status register and the RDY/BUSY pin will indicate that the part is busy. Table 7-1. Block Erase Addressing PA12/ A22 PA11/ A21 PA10/ A20 PA9/ A19 PA8/ A18 PA7/ A17 PA6/ A16 PA5/ A15 PA4/ A14 PA3/ A13 PA2/ A12 PA1/ A11 PA0/ A10 Block 00 0000000 0 X X X 0 00 0000000 1 X X X 1 00 0000001 0 X X X 2 00 0000001 1 X X X 3 • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • 11 1111110 0 X X X 1020 11 1111110 1 X X X 1021 11 1111111 0 X X X 1022 11 1111111 1 X X X 1023 |
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