AT45DB321C_06 datasheet(21/40 Pages) ATMEL

Part #	AT45DB321C

Description	32-megabit 2.7 volt DataFlash

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Manufacturer	ATMEL [ATMEL Corporation]

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21

3387L–DFLASH–6/06

AT45DB321C

10. Electrical Specifications

Note:

1. After power is applied and VCC is at the minimum specified datasheet value, the system should wait 20 ms before an opera-

tional mode is started.

Notes:

1. I

SB maximum specification limit is tested at 3.3V and 70°C.

2. ICC1 during a buffer read is 30 mA maximum.

3. ICC1 changes typically by 300 µA per 1 MHz change in clock frequency.

4. All inputs are 5 volts tolerant.

Table 10-1.

Absolute Maximum Ratings*

Temperature under Bias ................................ -55

°C to +125°C

*NOTICE:

Stresses beyond those listed under “Absolute

Maximum Ratings” may cause permanent dam-

age to the device. This is a stress rating only and

functional operation of the device at these or any

other conditions beyond those indicated in the

operational sections of this specification is not

implied. Exposure to absolute maximum rating

conditions for extended periods may affect device

reliability.

Storage Temperature ..................................... -65

°C to +150°C

All Input Voltages

(including NC Pins)

with Respect to Ground ...................................-0.6V to +6.25V

All Output Voltages

with Respect to Ground .............................-0.6V to VCC + 0.6V

Table 10-2.

DC and AC Operating Range

AT45DB321C

Operating Temperature (Case)

Com.

0

°C to 70°C

Ind.

-40

°C to 85°C

VCC Power Supply

(1)

2.7V to 3.6V

Table 10-3.

DC Characteristics

Symbol

Parameter

Condition

Min

Typ

Max

Units

I

SB

(1)

Standby Current

CS, RESET, WP = VIH, all

inputs at CMOS levels

615

µA

I

CC1

(2)(3)

Active Current, Read

Operation, Serial Interface

f = 20 MHz; I

OUT = 0 mA;

VCC = 3.6V

10

15

mA

ICC2

Active Current, Program

Operation, Page Program

VCC = 3.6V

35

50

mA

I

CC3

Active Current, Page Erase

Operation

V

CC = 3.6V

30

40

mA

I

CC4

Active Current, Block Erase

Operation

V

CC = 3.6V

30

40

mA

I

LI

Input Load Current

V

IN = CMOS levels

1

µA

I

LO

Output Leakage Current

V

I/O = CMOS levels

1

µA

VIL

Input Low Voltage

VCC x 0.3

V

IH

Input High Voltage

V

CC x 0.7

V

OL

Output Low Voltage

I

OL = 1.6 mA; VCC = 2.7V

0.4

V

VOH

Output High Voltage

IOH = -100 µA

VCC - 0.2V

V

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