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NCP5425DBR2G Datasheet(PDF) 3 Page - ON Semiconductor |
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NCP5425DBR2G Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 22 page NCP5425 http://onsemi.com 3 MAXIMUM RATINGS Rating Value Unit Operating Junction Temperature, TJ 150 °C Storage Temperature Range, TJ −65 to 150 °C ESD Susceptibility (Human Body Model) 2.0 kV ESD Susceptibility (Machine Model) 200 V Thermal Resistance, Junction−to−Air 140 °C/W Moisture Sensitivity Level (MSL) 1 Lead Temperature Soldering: Reflow: (Note 1) 260 peak °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. 60 to 150 seconds maximum above 183 °C, 260°C peak. MAXIMUM RATINGS Pin Symbol Pin Name VMAX VMIN ISOURCE ISINK VCC IC Power Input 16 V −0.3 V N/A 2.0 A Peak 200 mA DC COMP1, COMP2 Compensation Capacitor for Channel 1 or 2 4.0 V −0.3 V 1.0 mA 1.0 mA VFB1, VFB2, VREF2 Voltage Feedback Input for Channel 1 or 2 6.0 V −0.3 V 1.0 mA 1.0 mA ROSC Oscillator Resistor 5.0 V −0.3 V 1.0 mA 1.0 mA GATE(H)1, GATE(H)2 High−Side FET Driver for Channel 1 or 2 20 V −0.3 V 2.0 A Peak 200 mA DC 2.0 A Peak 200 mA DC GATE(L)1, GATE(L)2 Low−Side FET Driver for Channel 1 or 2 16 V −0.3 V 2.0 A Peak 200 mA DC 2.0 A Peak 200 mA DC IS+1, IS+2 Positive Current Sense for Channel 1 or 2 6.0 V −0.3 V 1.0 mA 1.0 mA IS−1, IS−2 Negative Current Sense for Channel 1 or 2 6.0 V −0.3 V 1.0 mA 1.0 mA GND Ground 100 mV 0 V 2.0 A Peak 200 mA DC N/A BST Power Input for GATE(H)1 GATE(H)2 23 V −0.3 V N/A 2.0 A Peak 200 mA DC MODE Dual or Single Output Select 3.5 V −0.3 V N/A N/A |
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