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MUR1620CT Datasheet(PDF) 2 Page - ON Semiconductor |
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MUR1620CT Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 7 page MUR1610CT, MUR1615CT, MUR1620CT, MUR1640CT, MUR1660CT http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol MUR16 Unit 10CT 15CT 20CT 40CT 60CT Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 100 150 200 400 600 V Average Rectified Forward Current Per Leg Total Device, (Rated VR), TC = 150°C Total Device IF(AV) 8.0 16 A Peak Rectified Forward Current Per Diode Leg (Rated VR, Square Wave, 20 kHz), TC = 150°C IFM 16 A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 100 A Operating Junction Temperature and Storage Temperature TJ, Tstg *65 to +175 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (Per Diode Leg) Parameter Symbol Value Unit Maximum Thermal Resistance, Junction−to−Case RqJC 3.0 2.0 °C/W ELECTRICAL CHARACTERISTICS (Per Diode Leg) Characteristic Symbol 1620 1640 1660 Unit Maximum Instantaneous Forward Voltage (Note 1) (iF = 8.0 A, TC = 150°C) (iF = 8.0 A, TC = 25°C) vF 0.895 0.975 1.00 1.30 1.20 1.50 V Maximum Instantaneous Reverse Current (Note 1) (Rated DC Voltage, TC = 150°C) (Rated DC Voltage, TC = 25°C) iR 250 5.0 500 10 mA Maximum Reverse Recovery Time (IF = 1.0 A, di/dt = 50 A/ms) (IF = 0.5 A, IR = 1.0 A, IREC = 0.25 A) trr 35 25 60 50 ns 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0% |
Similar Part No. - MUR1620CT_06 |
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Similar Description - MUR1620CT_06 |
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