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MJE13001 Datasheet(PDF) 1 Page - Unisonic Technologies |
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MJE13001 Datasheet(HTML) 1 Page - Unisonic Technologies |
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1 / 2 page  UTC MJE13001 NPN EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R201-055,A FEATURES * Collector-Base Voltage: V(BR)CBO=600V * Collector Current: IC=0.2A TO-92 1 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO 600 V Collector-emitter voltage VCEO 400 V Emitter-base voltage VEBO 7 V Collector current Ic 200 mA Collector power dissipation Pc 750 mW Junction Temperature Tj 150 °C Storage Temperature TSTG -55 ~ +150 °C ELECTRICAL CHARACTERISTICS (Tc=25°C) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage V(BR)CBO IC=100µA, IE=0 600 V Collector-Emitter Breakdown Voltage V(BR)CEO Ic=1mA, IB=0 400 V Emitter-Base Breakdown Voltage V(BR)EBO IE=100µA, IC=0 7 V Collector Cut-off Current ICBO VCB=600V, IE=0 100 µA Collector Cut-off Current ICEO VCE=400V, IB=0 200 µA Emitter Cut-off Current IEBO VEB=7V, IC=0 100 µA hFE(1) VCE=20V, Ic=20mA 10 70 DC current gain hFE(2) VCE=10V, Ic=0.25mA 5 Collector-emitter saturation voltage VCE(sat) Ic=50mA, IB=10mA 0.5 V Base-emitter Saturation Voltage VBE(sat) Ic=50mA, IB=10mA 1.2 V Base-emitter Voltage VBE IE=100mA 1.1 V Transition Frequency fT VCE=20V, Ic=20mA, f=1MHz 8 MHz Fall Time tF 0.3 µs Storage Time tS Ic=50mA, IB1=-IB2=5mA, Vcc=45V 1.5 µs |
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