Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BUT11APX

ISOLATION LIMITING VALUE & CHARACTERISTIC

T

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V

isol

R.M.S. isolation voltage from all

f = 50-60 Hz; sinusoidal

-

2500

V

three terminals to external

waveform;

heatsink

R.H.

≤ 65% ; clean and dustfree

C

isol

Capacitance from T2 to external f = 1 MHz

-

10

-

pF

heatsink

STATIC CHARACTERISTICS

T

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

I

CES

Collector cut-off current

1

V

-

-

1.0

mA

I

CES

V

-

-

2.0

mA

T

I

EBO

Emitter cut-off current

V

-

-

10

mA

V

CEOsust

Collector-emitter sustaining voltage

I

450

-

-

V

L = 25 mH

V

CEsat

Collector-emitter saturation voltages I

-

0.25

1.5

V

V

BEsat

Base-emitter saturation voltage

I

-

-

1.3

V

h

FE

DC current gain

I

10

22

35

h

FE

I

14

25

35

h

FEsat

I

10

13.5

17

h

FEsat

I

8

10

12

DYNAMIC CHARACTERISTICS

T

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

Switching times (resistive load)

I

R

t

on

Turn-on time

0.5

0.7

µs

t

s

Turn-off storage time

3.3

4

µs

t

f

Turn-off fall time

0.33

0.45

µs

Switching times (inductive load)

I

-V

t

s

Turn-off storage time

1.4

1.6

µs

t

f

Turn-off fall time

145

160

ns

Switching times (inductive load)

I

-V

t

s

Turn-off storage time

1.7

1.9

µs

t

f

Turn-off fall time

160

200

ns

1 Measured with half sine-wave voltage (curve tracer).

September 1998

2

Rev 1.000