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BUT11APX Datasheet(PDF) 6 Page - NXP Semiconductors |
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BUT11APX Datasheet(HTML) 6 Page - NXP Semiconductors |
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6 / 8 page  Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11APX Fig.16. Forward bias safe operating area. T hs ≤ 25 ˚C (1) P tot max and Ptot peak max lines. (2) Second breakdown limits. I Region of permissible DC operation. II Extension for repetitive pulse operation. III Extension during turn-on in single transistor converters provided that R BE ≤ 100 Ω and tp ≤ 0.6 µs. NB: Mounted with heatsink compound and 30 ± 5 newton force on the centre of the envelope. 1 10 100 1000 100 10 1 0.1 0.01 tp = 10 us 100 us 1 ms 10 ms DC IC / A V / V ICM max IC max II I = 0.01 III 500 ms (1) (2) CE September 1998 6 Rev 1.000 |
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