BUT11APX datasheet(5/8 Pages) PHILIPS

Part #	BUT11APX

Description	Silicon Diffused Power Transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BUT11APX

Fig.13. Transient thermal impedance.

Z

th j-hs = f(t); parameter D = tp/T

Fig.14. Reverse bias safe operating area. T

j ≤ Tj max

Fig.15. Test circuit RBSOA. V

cl ≤ 1000V; Vcc = 150V;

V

BB = -5V; LB = 1µH; Lc = 200µH

1u

100u

10m

1

100

t / s

Zth / (K/W)

10

1

0.1

0.01

0.001

D=0

0.5

0.2

0.1

0.05

0.02

10u

1m

100m

10

D =

tp

T

P

t

D

tp

BU1706AX

LB

IBon

-VBB

LC

T.U.T.

VCC

VCL

0

200

400

600

800

1,000

1,200

0

1

2

3

4

5

6

7

8

9

10

11

VCE CLAMP/V

IC/V

September 1998

5

Rev 1.000

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